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6 More Hollow Cathode Plasma Assisted Film Growth Publications

Meaglow_ALDSix new journal publications from three groups can be found on our website, with links to the publishers for downloading the articles. See The titles are::

“Low-temperature self-limiting atomic layer deposition of wurtzite InN on Si(100)”

“Comparison of trimethylgallium and triethylgallium as “Ga” source materials for the
growth of ultrathin GaN films on Si (100) substrates via hollow-cathode plasma assisted
atomic layer deposition”

“Substrate temperature influence on the properties of GaN thin films grown by hollow cathode plasma-assisted atomic layer deposition”

Low-temperature sequential pulsed chemical vapor deposition of ternary BxGa1-xN
and BxIn1-xN thin film alloys

“Self-Catalytic Growth of InN Nanowires”

Optoelectronic and structural properties of InGaN grown by Migration-Enhanced, Plasma-Assisted MOCVD

A big thanks to our customers and collaborators for being so productive, we’re glad our hollow cathode plasma sources have given you that technology edge!


Meaglow to be at ALD2016 in Dublin

IMG_1875Meaglow’s Chief Scientist, Dr Butcher, and our Korean agents from Paultec will be there.

Meaglow will have table 28 of the exhibits. We are extremely pleased that representatives of our Korean agency, Paultec, will also be present, including Mr. Dong-Hyun Kim. A series 50 plasma source, one of our most popular sources, will be brought to the exhibition. Come and talk to us about reducing oxygen levels in nitride films. We hope to see you in Dublin on the 24th-27th of July.


Meaglow Hollow Cathode Plasma Source for NASA


The NASA Jet Propulsion Laboratory (JPL) have converted one of their ALD systems to a custom made Meaglow hollow cathode plasma source. This is an 8″ diametre plasma source, one of our biggest in recent years. The source was delivered early this year and has apparently been running extremely well. Results may be presented later this year.


ALD Nanosolutions & Meaglow Partner

ALD Nanosolutions/Meaglow Development Partnership

THUNDER BAY, ONTARIO–(April 21, 2015) ALD NanoSolutions and Meaglow are pleased to announce an exclusive partnership for the development and marketing of hollow cathode plasma sources uniquely suited for atomic layer deposition onto particles. An ALD NanoSolutions particle reactor combined with a Meaglow plasma source allows newly developed plasma ALD chemistries to be performed onto particles in appreciable quantities. This expanded capability enables development of new materials and their eventual commercialization.

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Meaglow Plasma Source Provides Breakthrough for Advanced Semiconductor Production Technique

Meaglow Ltd. (Privately Held) announces a breakthrough in semiconductor production. As computer chips become smaller and smaller, advanced production techniques, such as Atomic Layer Deposition (ALD) have become more important for depositing thin layers of material. Unfortunately the ALD of some materials has been prone to contamination from the plasma sources used. Meaglow Ltd has developed a hollow cathode plasma source which has reduced oxygen contamination by orders of magnitude, allowing the reproducible deposition of semiconductor materials with improved quality.

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Meaglow Hollow Cathode Plasma Source to Upgrade Atomic Layer Deposition at Bilkent University

Meaglow Ltd. (Privately Held) announces the installation of a hollow cathode plasma source for the group of Professor Necmi Biyikli, of the Institute of Materials Science and Nanotechnology, at Bilkent University in Turkey. The plasma source is being used to upgrade their Atomic Layer Deposition (ALD) system by replacing an inductively coupled plasma source. This enhancement will reduce the oxygen contamination in ALD systems and increase the quality of Nitride thin films grown.

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Meaglow Hollow Cathode Plasma Source Goes to GSU


Meaglow Ltd. (Privately Held) announces the sale of a prototype hollow cathode plasma source to Georgia State University (GSU) in the United States. The plasma source will be used for the conversion of a low pressure MOCVD system to a plasma deposition unit. Meaglow has demonstrated great success in the deposition of high indium content InGaN with its hollow cathode plasma source and recently demonstrated a yellow LED in collaboration with Lakehead University in Thunder Bay, Canada.

Meaglow is now focused on commercializing its hollow cathode plasma technology, and is looking for partners interested in developing the plasma source for MBE and other applications. Interested parties should email



Meaglow Commercializing InGaN

Meaglow Yellow LED

THUNDER BAY, ONTARIO.—August 30, 2012—Meaglow Ltd. (Privately Held) announces its low temperature Migration Enhanced Afterglow film growth technique has been used to produce a thick Indium Gallium Nitride (InGaN) layer with strong yellow emission. This recent result bodes well to increase the efficiency and lower production costs of green LEDs and laser diodes. The company is currently seeking collaboration opportunities to enhance the material properties required by industry for lighting, display, medical, and military applications among other uses.

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