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Is this the strongest 300 watt plasma source available for ALD?


The answer is, yes.

Of course hidden away in someone’s lab, somewhere, there might be something comparable, but that wouldn’t be ‘available’. Certainly there’s nothing else like this that we’re aware of. So let’s have a look at what makes Meaglow’s latest hollow cathode design so special.

The plasma source shown was developed for the conversion of OkyayTech’s thermal ALD systems. This model is for 4″ wafers, it has a separate loading port for samples; doesn’t need cooling water, and it really doesn’t care about getting deposits on the cathode.

Using nitrogen gas we’ve measured the electron density to greater than 10^13 cm^-3 at 300 watts of RF power. That’s a formidable value for any plasma source, about an order of magnitude higher than other commonly available 300 watt products, but here’s the thing, that plasma density is being generated over an area equal to the substrate.

Other solutions generate high density plasma in a small volume and then disperse it to a larger area. Not so the new Meaglow source, it has an extremely high plasma density over the full substrate area. This design has already been successfully implemented in 4″ and 8″ systems, and there are plans to go to 12″.

“This is the way that ALD should be done,” says Meaglow’s Chief Scientist, Dr Scott Butcher. “We’re developing plasma sources specifically for ALD, not trying to adapt old legacy sources that are less than optimum for the technique.”


Meaglow supplies complete ALD/ALE system

Many of our hollow cathode customers had started asking: ‘What’s the best new system to buy if I want to convert to hollow cathode?’ But recently a past customer came and asked us to build a full ALD/ALE system for him. The system was commissioned in June and July and is for 8″ wafers. It is UHV compatible and includes an 8″ diameter hollow cathode source, compatible with chlorine plasma operation.

Meaglow has begun building a second smaller 4″ system, though this one will see a substantial increase in plasma power. Meaglow has published and has patent applications for methods that could allow some real leaps forward in ALD and other plasma technology.



6 More Hollow Cathode Plasma Assisted Film Growth Publications

Meaglow_ALDSix new journal publications from three groups can be found on our website, with links to the publishers for downloading the articles. See The titles are::

“Low-temperature self-limiting atomic layer deposition of wurtzite InN on Si(100)”

“Comparison of trimethylgallium and triethylgallium as “Ga” source materials for the
growth of ultrathin GaN films on Si (100) substrates via hollow-cathode plasma assisted
atomic layer deposition”

“Substrate temperature influence on the properties of GaN thin films grown by hollow cathode plasma-assisted atomic layer deposition”

Low-temperature sequential pulsed chemical vapor deposition of ternary BxGa1-xN
and BxIn1-xN thin film alloys

“Self-Catalytic Growth of InN Nanowires”

Optoelectronic and structural properties of InGaN grown by Migration-Enhanced, Plasma-Assisted MOCVD

A big thanks to our customers and collaborators for being so productive, we’re glad our hollow cathode plasma sources have given you that technology edge!


Meaglow to be at ALD2016 in Dublin

IMG_1875Meaglow’s Chief Scientist, Dr Butcher, and our Korean agents from Paultec will be there.

Meaglow will have table 28 of the exhibits. We are extremely pleased that representatives of our Korean agency, Paultec, will also be present, including Mr. Dong-Hyun Kim. A series 50 plasma source, one of our most popular sources, will be brought to the exhibition. Come and talk to us about reducing oxygen levels in nitride films. We hope to see you in Dublin on the 24th-27th of July.


Meaglow Hollow Cathode Plasma Source for NASA


The NASA Jet Propulsion Laboratory (JPL) have converted one of their ALD systems to a custom made Meaglow hollow cathode plasma source. This is an 8″ diametre plasma source, one of our biggest in recent years. The source was delivered early this year and has apparently been running extremely well. Results may be presented later this year.


ALD Nanosolutions & Meaglow Partner

ALD Nanosolutions/Meaglow Development Partnership

THUNDER BAY, ONTARIO–(April 21, 2015) ALD NanoSolutions and Meaglow are pleased to announce an exclusive partnership for the development and marketing of hollow cathode plasma sources uniquely suited for atomic layer deposition onto particles. An ALD NanoSolutions particle reactor combined with a Meaglow plasma source allows newly developed plasma ALD chemistries to be performed onto particles in appreciable quantities. This expanded capability enables development of new materials and their eventual commercialization.

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Meaglow Plasma Source Provides Breakthrough for Advanced Semiconductor Production Technique

Meaglow Ltd. (Privately Held) announces a breakthrough in semiconductor production. As computer chips become smaller and smaller, advanced production techniques, such as Atomic Layer Deposition (ALD) have become more important for depositing thin layers of material. Unfortunately the ALD of some materials has been prone to contamination from the plasma sources used. Meaglow Ltd has developed a hollow cathode plasma source which has reduced oxygen contamination by orders of magnitude, allowing the reproducible deposition of semiconductor materials with improved quality.

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