Meaglow Ltd. (Privately Held) announces the installation of a hollow cathode plasma source for the group of Professor Necmi Biyikli, of the Institute of Materials Science and Nanotechnology, at Bilkent University in Turkey. The plasma source is being used to upgrade their Atomic Layer Deposition (ALD) system by replacing an inductively coupled plasma source. This enhancement will reduce the oxygen contamination in ALD systems and increase the quality of Nitride thin films grown.
Meaglow Ltd. (Privately Held) announces the sale of a prototype hollow cathode plasma source to Georgia State University (GSU) in the United States. The plasma source will be used for the conversion of a low pressure MOCVD system to a plasma deposition unit. Meaglow has demonstrated great success in the deposition of high indium content InGaN with its hollow cathode plasma source and recently demonstrated a yellow LED in collaboration with Lakehead University in Thunder Bay, Canada.
Meaglow is now focused on commercializing its hollow cathode plasma technology, and is looking for partners interested in developing the plasma source for MBE and other applications. Interested parties should email firstname.lastname@example.org
THUNDER BAY, ONTARIO.—August 30, 2012—Meaglow Ltd. (Privately Held) announces its low temperature Migration Enhanced Afterglow film growth technique has been used to produce a thick Indium Gallium Nitride (InGaN) layer with strong yellow emission. This recent result bodes well to increase the efficiency and lower production costs of green LEDs and laser diodes. The company is currently seeking collaboration opportunities to enhance the material properties required by industry for lighting, display, medical, and military applications among other uses.
Meaglow’s Migration Enhanced Afterglow technique was compared to Molecular Beam Epitaxy (MBE) and Metalorganic Chemical Vapour Deposition (MOCVD) processes. The F&S report summarizes that Meaglow is a new disruptive thin film growth technique that overcomes these other processes limitations with a bright future in Field Effect Transistors (FET), LEDs, and Photovoltaics/Solar Cells. For the full technical insights report, click here.
Meaglow featured in PV Insider Concentrated Photovoltaic Brief identifying the need for new materials and processes to cut solar production costs, in some cases by as much as 85%. The article provides direct application of new industry material Indium Nitride to the photo-voltaic industry and gives a glimpse of Meaglow’s bright future going forward. Read the full article from PV Insider.
Meaglow is proud to announce one of our researchers, Dr. Penka Terziyska, has been awarded a prize at ICNS-9 in Glasgow, U.K. The poster analyzes the Atomic Force Microscopic Study of GaN growth by Migration Enhanced Afterglow (MEAglow).
See the winning poster: ICNS9 Poster