THUNDER BAY, ONTARIO.—August 30, 2012—Meaglow Ltd. (Privately Held) announces its low temperature Migration Enhanced Afterglow film growth technique has been used to produce a thick Indium Gallium Nitride (InGaN) layer with strong yellow emission. This recent result bodes well to increase the efficiency and lower production costs of green LEDs and laser diodes. The company is currently seeking collaboration opportunities to enhance the material properties required by industry for lighting, display, medical, and military applications among other uses.
Meaglow’s Migration Enhanced Afterglow technique was compared to Molecular Beam Epitaxy (MBE) and Metalorganic Chemical Vapour Deposition (MOCVD) processes. The F&S report summarizes that Meaglow is a new disruptive thin film growth technique that overcomes these other processes limitations with a bright future in Field Effect Transistors (FET), LEDs, and Photovoltaics/Solar Cells. For the full technical insights report, click here.
Meaglow featured in PV Insider Concentrated Photovoltaic Brief identifying the need for new materials and processes to cut solar production costs, in some cases by as much as 85%. The article provides direct application of new industry material Indium Nitride to the photo-voltaic industry and gives a glimpse of Meaglow’s bright future going forward. Read the full article from PV Insider.
Meaglow is proud to announce one of our researchers, Dr. Penka Terziyska, has been awarded a prize at ICNS-9 in Glasgow, U.K. The poster analyzes the Atomic Force Microscopic Study of GaN growth by Migration Enhanced Afterglow (MEAglow).
See the winning poster: ICNS9 Poster