Researchers at the California Institute of Technology (Caltech) have joined a growing number of institutes that have upgraded their plasma assisted ALD system with a hollow cathode plasma source. Meaglow’s plasma sources are well known for improving nitride layers by lowering oxygen content.
One such upgrade enabled low temperature GaN thin film transistors to be deposited at 200 degrees C (see the related Applied Physics Letter). While more recent work has allowed the demonstration of superior silicon nitride layers grown for device purposes (see our earlier article).
Meaglow is committed to enabling the next generation of materials development by providing deposition solutions that meet the stringent requirements of today’s researchers. See our product lines at www.meaglow.com.