Meaglow Ltd. (Privately Held) announces a breakthrough in semiconductor production. As computer chips become smaller and smaller, advanced production techniques, such as Atomic Layer Deposition (ALD) have become more important for depositing thin layers of material. Unfortunately the ALD of some materials has been prone to contamination from the plasma sources used. Meaglow Ltd has developed a hollow cathode plasma source which has reduced oxygen contamination by orders of magnitude, allowing the reproducible deposition of semiconductor materials with improved quality.
Meaglow Ltd. (Privately Held) announces the installation of a hollow cathode plasma source for the group of Professor Necmi Biyikli, of the Institute of Materials Science and Nanotechnology, at Bilkent University in Turkey. The plasma source is being used to upgrade their Atomic Layer Deposition (ALD) system by replacing an inductively coupled plasma source. This enhancement will reduce the oxygen contamination in ALD systems and increase the quality of Nitride thin films grown.
Meaglow Ltd. (Privately Held) announces the sale of a prototype hollow cathode plasma source to Georgia State University (GSU) in the United States. The plasma source will be used for the conversion of a low pressure MOCVD system to a plasma deposition unit. Meaglow has demonstrated great success in the deposition of high indium content InGaN with its hollow cathode plasma source and recently demonstrated a yellow LED in collaboration with Lakehead University in Thunder Bay, Canada.
Meaglow is now focused on commercializing its hollow cathode plasma technology, and is looking for partners interested in developing the plasma source for MBE and other applications. Interested parties should email email@example.com