Meaglow’s Migration Enhanced Afterglow technique was compared to Molecular Beam Epitaxy (MBE) and Metalorganic Chemical Vapour Deposition (MOCVD) processes. The F&S report summarizes that Meaglow is a new disruptive thin film growth technique that overcomes these other processes limitations with a bright future in Field Effect Transistors (FET), LEDs, and Photovoltaics/Solar Cells. For the full technical insights report, click here.
Meaglow featured in PV Insider Concentrated Photovoltaic Brief identifying the need for new materials and processes to cut solar production costs, in some cases by as much as 85%. The article provides direct application of new industry material Indium Nitride to the photo-voltaic industry and gives a glimpse of Meaglow’s bright future going forward. Read the full article from PV Insider.
Today Meaglow was the feature story in or Magazine in an article entitled Slashing Temperatures for Nitride Growth. The article discusses Meaglow Ltd. technology in comparison to MOCVD, the Meaglow growth technique and applications to industry as well as a background on one of the founder, Dr. Scott Butcher.
left: Migration enhanced overflow can form Ga-face GaN films with a thickness of 200 nm at 630 ºC. Atomic force microscopy reveal that the root-mean-square surface roughness of this film is 0.23 nm. Molecular terraces can be distinguished in the image. Above right: Atomic force microscopy reveals that the InN surface has a root-mean-square roughness of 0.1 nm and features molecular terraces.
Click on article for more details.