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Press Releases

ALD Nanosolutions/Meaglow Development Partnership

THUNDER BAY, ONTARIO–(April 21, 2015) ALD NanoSolutions and Meaglow are pleased to announce an exclusive partnership for the development and marketing of hollow cathode plasma sources uniquely suited for atomic layer deposition onto particles. An ALD NanoSolutions particle reactor combined with a Meaglow plasma source allows newly developed plasma ALD chemistries to be performed onto particles in appreciable quantities. This expanded capability enables development of new materials and their eventual commercialization. “When you’re coating hundreds of grams of powder, ALD product gases significantly change the gas composition, requiring a robust remote plasma source,” says Joe Spencer, Director of Operations at ALD NanoSolutions. “The Meaglow hollow cathode plasma source strikes easily in a very wide pressure range that gives us a lot of versatility.”

“When I think of hi-tech materials, I think of ALD NanoSolutions, who I know to be doing some incredibly innovative things with powders. Apart from being very robust, I think the Meaglow hollow cathode plasma source will bring the advantages of less plasma damage, higher growth per cycle, and minimized oxygen contamination for nitrides. We’re incredibly pleased to see our plasma source being mated to ALD NanoSolutions’ reactor systems,” says Scott Butcher, Chief Scientist of Meaglow Ltd.

About Meaglow Ltd.

Meaglow Ltd. produces a new range of epitaxy equipment, including custom built hollow cathode plasma sources for ALD equipment and other applications. These next generation plasma sources have been shown to provide lower oxygen and higher growth rates in many situations.

About ALD NanoSolutions

At ALD NanoSolutions, we bring the future of nanotechnology to the present. From new forms of lighting to advanced lithium-ion batteries, we are working with Fortune 100 companies to vastly improve their current products in an economically and environmentally sustainable way. We currently offer a large portfolio of technical expertise including tolling runs, licensing and equipment. Our mission is to accelerate the commercial success of a wide range of industries by delivering our superior material solutions based on our proprietary nanocoating platform. Further information about ALD NanoSolutions is available at www.aldnanosolutions.com.

 


Meaglow Ltd Helps Make Christmas Trees Brighter

THUNDER BAY, ONTARIO.—December, 2014—Meaglow Ltd. (Privately Held) announces that its research staff, together with students of our Chief Scientist, Dr Butcher, have shed light on LED Inefficiency.

In a publication now on line at the journal of Solid State Electronics vol. 103 (2015) 44, Meaglow staff, and students of Lakehead University, have identified a significant parasitic current in one of the layers used for LEDs. This current does not contribute to light emission and therefore lowers LED efficiency. The current is due to background oxygen contamination in p-GaN layers. Three p-GaN templates bought commercially from different suppliers all had significant parasitic currents of this type.

The research shows that oxygen monitoring for MOCVD grown p-GaN, and better quality control, are easy paths toward improved LED efficiency. The research also points to an opportunity for companies who have equipment that can provide in-situ monitoring of oxygen in p-GaN.

The recent publication has already appeared in some media sources, see for instance http://www.compoundsemiconductor.net/article/95421-a-new-source-of-gan-ingan-led-performance-limitation.html .

“In the long term, even modest efficiency improvements in nitride LEDs can ultimately lead to hundreds of millions, if not billions, of dollars in energy savings,” says Dr Butcher. Meaglow, is pleased to have done its part in making it a brighter and greener Christmas for everyone.

 


Meaglow Plasma Source Provides Major Breakthrough for Advanced Semiconductor Production Technique

THUNDER BAY, ONTARIO.—March, 2014—Meaglow Ltd. (Privately Held) announces a breakthrough in semiconductor production. As computer chips become smaller and smaller, advanced production techniques, such as Atomic Layer Deposition (ALD) have become more important for depositing thin layers of material. Unfortunately the ALD of some materials has been prone to contamination from the plasma sources used. Meaglow Ltd has developed a hollow cathode plasma source which has reduced oxygen contamination by orders of magnitude, allowing the reproducible deposition of semiconductor materials with improved quality.

The breakthrough has been shown in a recent publication of oxygen reduction figures for the hollow cathode plasma source supplied last year to the group of Professor Necmi Biyikli, of the Institute of Materials Science and Nanotechnology, at Bilkent University in Turkey. The plasma source was used to upgrade their existing Atomic Layer Deposition (ALD) system by replacing an inductively coupled plasma source.  The publication in the Journal of Materials Chemistry C (J. Mater. Chem. C 2 (2014) 2123) shows a reduction in oxygen content of orders of magnitude compared to previous results. There is also a marked improvement in material quality. These results render the older inductively coupled plasma sources obsolete for many applications.

Meaglow is seeking other customers interested in improving the material quality of their ALD and other plasma grown nitride layers. The hollow cathode plasma technology also has the advantage of scalability to large deposition areas. The Plasma source can be used to retrofit existing systems or can be integrated with equipment manufacturers.  It can also be utilized in a number of different applications including MBE, and LPMOCVD among others. Interested parties should email info@meaglow.com

 


 

Meaglow Hollow Cathode Plasma Source to Upgrade Atomic Layer Deposition at Bilkent University

THUNDER BAY, ONTARIO.—July, 2013—Meaglow Ltd. (Privately Held) announces the installation of a hollow cathode plasma source for the group of Professor Necmi Biyikli, of the Institute of Materials Science and Nanotechnology, at Bilkent University in Turkey. The plasma source is being used to upgrade their Atomic Layer Deposition (ALD) system by replacing an inductively coupled plasma source.  This enhancement will reduce the oxygen contamination in ALD systems and increase the quality of Nitride thin films grown.

“The Bilkent system was easy to retrofit and the Meaglow Plasma source was the perfect solution for their oxygen contamination problem.” Says Dr. Butcher, Chief Scientist of Meaglow.

Initial results show a significant reduction of oxygen content in compound Nitride films grown. Results will be presented October 27th-November 1st at the 224th ECS Fall Meeting in San Francisco, CA at an invited talk presented at the symposium on “Atomic Layer Deposition Applications”.

Meaglow is now focused on commercializing its hollow cathode plasma technology which also has the advantage of scalability to large deposition areas. Meaglow is seeking additional ALD system owners and suppliers interested in removing the oxygen contamination in their films.  The Plasma source can be used to retrofit existing systems or can be integrated with equipment manufacturers.  The plasma source can be utilized in a number of different applications including MBE, and LPMOCVD among others. Interested parties should email info@meaglow.com


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