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Publications

Hollow cathode ALD papers
Hollow cathode CVD papers
Meaglow reactor papers
  • Real-time in situ ellipsometric monitoring of aluminum nitride film growth via hollow cathode plasma-assisted atomic layer deposition
    Adnan Mohammad, Deepa Shukla, Saidjafarzoda Ilhom, Brian Willis, Blaine Johs, Ali Kemal Okyay, and Necmi Biyikli
    J. Vac. Sci. Technol. A 37 (2019) 020927.

    Investigation of the Physical Properties of Plasma Enhanced Atomic Layer Deposited Silicon Nitride as Etch Stopper
    Harrison Sejoon Kim, Xin Meng, Si Joon Kim, Antonio T. Lucero, Lanxia Cheng, Young-Chul Byun, Joy S. Lee, Su Min Hwang, Aswin L. N. Kondusamy, Robert M. Wallace, Gary Goodman, Alan S. Wan, Michael Telgenhoff, Byung Keun Hwang, and Jiyoung Kim
    ACS Applied Materials and Interfaces 10 (2018) 44825.

    Emergent Electrical Properties of Ensembles of 1D Nanostructures and Their Impact on Room Temperature Electrical Sensing of Ammonium Nitrate Vapor
    Lyndon D. Bastatas, Elena Echeverria-Mora, Phadindra Wagle, Punya Mainali, Aaron Austin, and David N. McIlroy
    ACS Sensors 3 (2018) 2367.

    Fabrication of Core−Shell Nanotube Array for Artificial Photosynthesis Featuring an Ultrathin Composite Separation Membrane
    E. Edri, S. Aloni, and H. Frei
    ACS Nano 12 (2018) 533.

    Nanoscale membranes that chemically isolate and electronically wire up the abiotic/biotic interface
    J. A. Cornejo, H. Sheng, Eran Edri, C. M. Ajo-Franklin and H. Frei
    Nature Communications 9 (2018) 2263.

    Robust SiNx/GaN MIS-HEMTs with Crystalline Interfacial Layer Using Hollow Cathode PEALD
    X. Meng, J. Lee, A. V. Ravichandran, Y.-C. Byun, J.-G. Lee, A. T. Lucero, S. J. Kim, M.-W Ha, C. D. Young and J. Kim
    IEEE Electron Device Letters 39 (2018) 1195.

    Hollow Cathode Plasma-Enhanced Atomic Layer Deposition of Silicon Nitride Using Pentachlorodisilane
    X. Meng, H. S. Kim, A. T. Lucero, S. M. Hwang, J. S. Lee, Y.-C. Byun, J. Kim, B. K. Hwang, X. Zhou, J. Young and M. Telgenhoff
    ACS Applied Materials and Interfaces 10 (2018) 14116.

    Influence of N2/H2 and N2 plasma on binary III-nitride films prepared by hollow-cathode
    plasma-assisted atomic layer deposition
    Mustafa Alevli, and Nese Gungor
    Journal of Vacuum Science and Technology A36 (2018) 01A110.

    Demonstration of flexible thin film transistors with GaN channels
    S. Bolat, Z. Sisman, and A. K. Okyay
    Applied Physics Letters 109 (2016) 233504.

    Substrate impact on the low-temperature growth of GaN thin films by plasma-assisted
    atomic layer deposition
    Seda Kizir, Ali Haider, and Necmi Biyikli
    Journal of Vacuum Science and Technology A34 (2016) 041511.

    Low-temperature self-limiting atomic layer deposition of wurtzite InN on Si(100)
    Ali Haider, Seda Kizir, and Necmi Biyikli
    AIP Advances 6 (2016) 045203.

    Comparison of trimethylgallium and triethylgallium as “Ga” source materials for the
    growth of ultrathin GaN films on Si (100) substrates via hollow-cathode plasmaassisted
    atomic layer deposition
    Mustafa Alevli, Ali Haider, Seda Kizir, Shahid A. Leghari, and Necmi Biyikli
    Journal of Vacuum Science & Technology A 34 (2016) 01A137.

    Substrate temperature influence on the properties of GaN thin films grown by hollow cathode
    plasma-assisted atomic layer deposition
    Mustafa Alevli, Neşe Gungor, Ali Haider, Seda Kizir, Shahid A. Leghari, and Necmi Biyikli
    Journal of Vacuum Science & Technology A 34 (2016) 01A125.

    Low-temperature sequential pulsed chemical vapor deposition of ternary BxGa1-xN
    and BxIn1-xN thin film alloys
    Ali Haider, Seda Kizir, Cagla Ozgit-Akgun, Ali Kemal Okyay, and Necmi Biyikli
    Journal of Vacuum Science & Technology A 34 (2016) 01A123.

    Charge Transport through Organic Molecular Wires Embedded in Ultrathin Insulating Inorganic Layer
    E. Edri and H. Frei
    Journal of Physical Chemistry C 119 (2015) 28326.

    Hollow-Cathode Plasma-Assisted Atomic Layer Deposition: a Novel Route for Low-Temperature Synthesis of Crystalline III-Nitride Thin Films and Nanostructures
    N. Biyikli, C. Ozgit-Akgun, E. Goldenberg, A. Haider, S. Kizir, T. Uyar, S. Bolat, B. Tekcan, A. Kemal Okyay
    2015 IEEE 35th International Conference on Electronics and Nanotechnology (ELNANO) (2015) 218.

    Low-temperature hollow cathode plasma-assisted atomic layer deposition of crystalline III-nitride thin films and nanostructures
    C. Ozgit-Akgun, E. Goldenberg, S. Bolat, B. Tekcan, F. Kayaci, T. Uyar, A. Kemal Okyay, and N. Biyikli
    Phys. Status Solidi C 12 (2015) 394.

    Fabrication of flexible polymer–GaN core–shell nanofibers by the combination of electrospinning and hollow cathode plasma-assisted atomic layer deposition
    C. Ozgit-Akgun, F. Kayaci, S. Vempati, A. Haider, A. Celebioglu, E. Goldenberg, S. Kizir, T. Uyar and N. Biyikli
    J. Mater. Chem C 3 (2015) 5199.

    Electronic and optical device applications of hollow cathode plasma assisted atomic layer deposition based GaN thin films
    S. Bolat, B. Tekcan, C. Ozgit-Akgun, N. Biyikli and A. Kemal Okyay
    Journal of Vacuum Science and Technology A 33 (2015) 01A143.

    Low-Temperature Deposition of Hexagonal Boron Nitride via Sequential Injection of Triethylboron and N2/H2 Plasma
    A. Haider, C. Ozgit-Akgun, E. Goldenberg, A. Kemal Okyay and N. Biyikli
    Journal of the American Ceramic Society 97 (2014) 4052-4059.

    Metal-semiconductor-metal ultraviolet photodetectors based on gallium nitride grown by atomic layer deposition at low temperatures
    B. Tekcan, C. Ozgit-Akgun, S. Bolat, N. Biyikli and A. Kemal Okyay
    Optical Engineering 53 (2014) 107106.

    Fabrication of AlN/BN bishell hollow nanofibers by electrospinning and atomic layer deposition
    A. Haider, C. Ozgit-Akgun, F. Kayaci, A. Kemal Okyay, T. Uyar, and N. Biyikli
    APL Materials 2 (2014) 096109.

    Hollow cathode plasma-assisted atomic layer deposition of crystalline AlN, GaN and AlxGa1-xN thin films at low temperatures
    Cagla Ozgit-Akgun, Eda Goldenberg, Ali Kemal Okyay, and Necmi Biyikli
    Journal of Materials Chemistry C 2 (2014) 2123-2126.

    Low temperature thin film transistors with hollow cathode plasma-assisted atomic layer deposition based GaN channels
    S. Bolat, C. Ozgit-Akgun, B. Tekcan, N. Biyikli and A.K. Okyay
    Applied Physics Letters, 104 (2014) 243505.

    Optical characteristics of nanocrystalline AlxGa1-xN  thin films deposited by hollow cathode plasma-assisted atomic layer deposition
    Eda Goldenberg, Cagla Ozgit-Akgun, Necmi Biyikli and Ali Kemal Okyay
    Journal of Vacuum Science and Technology A 32 (2014) 031508.

  • DC voltage fields generated by RF plasmas and their influence on film growth morphology through static attraction to metal wetting layers: Beyond ion bombardment effects
    K. S. A. Butcher, P. T. Terziyska, R. Gergova, V. Georgiev, D. Georgieva, P. W. Binsted, and S. Skerget
    Journal of Applied Physics 121 (2017) 013301.

    Self-Catalytic Growth of InN Nanowires
    P.T. Terziyska, K.S.A. Butcher
    Bulgarian Journal of Physics, 43 (2016) 54.

    Effect of AlN buffer layers on the structural and optoelectronic properties of InN/AlN/Sapphire heterostructures grown by MEPAMOCVD
    M. K. Indika Senevirathna, Daniel Seidlitz, Alireza Fali, Brendan Cross, Yohannes Abate,
    and Nikolaus Dietz
    Proceedings of the SPIE Vol.9954 (2016) 95540R.

    Optoelectronic and structural properties of InGaN grown by Migration-Enhanced, Plasma-Assisted MOCVD
    D. Seidlitz, M.K.I. Senevirathna, Y. Abate, A. Hoffmann and N. Dietz
    Proceedings of the SPIE Vol.9571 (2015) 95710P.

    Growth of vertically oriented InN nanorods from In-rich conditions on unintentionally patterned sapphire substrates
    P. T. Terziyska, K. S. A. Butcher, P. Rafailov and D. Alexandrov
    Applied Surface Science 353 (2015) 103-105.

    GaN–InGaN LED efficiency reduction from parasitic electron currents in p-GaN
    Togtema, V. Georgiev, D. Georgieva, R. Gergova, K.S.A. Butcher and D. Alexandrov
    Solid State Electronics 103 (2015) 44-48.

    Initial results for epitaxial growth of InN on gallium oxide and improved Migration-Enhanced Afterglow Epitaxy growth on gallium nitride
    R. Gergova, K. S. A. Butcher, P. W. Binstead and D. Gogova
    Journal of Vacuum Science and Technology B 32 (2014) 031207.

    Optical and Structural Characterisation of Nitrogen Rich  InN: Transition From Nearly Intrinsic to Strongly n-type Degenerate With  Temperature
    N. H. Tran, B. H. Le, S. Fan, S. Zhao, Z. Mi, B. A.  Schmidt, M. Savard, G. Gervais, and K. S. A. Butcher
    Applied Physics Letters 103 (2013) 262101.

    InN Nanopillars Grown From In-rich Conditions by  Migration Enhanced Afterglow
    P. Terziyska, K. S. A.  Butcher, D. Gogova, D. Alexandrov, P. Binsted and G. Wu
    Materials Letters 106 (2013) 155-157.

    Gallium Nitride Film Growth using a Plasma Based Migration Enhanced Afterglow (MEAglow) CVD System.
    K. S. A. Butcher, B. W. Kemp, I. B. Hristov, P. Terziyska, P. W. Binsted and D. Alexandrov
    Japanese Journal of Applied Physics 51 (2012) 01AF02.

    Investigation of the presence of Ga droplets after pulsed InN and GaN epitaxial growth using atomic force microscopy and nanoindentation.
    P. Terziyska, K. S. A. Butcher, and D. Alexandrov.
    Applied Surface Science 258 (2012) 9997-10001.

    Initial Experiments in the Migration Enhanced Afterglow Growth of Gallium and Indium Nitride.
    K. S. A. Butcher, D. Alexandrov, P. Terziyska, V. Georgiev and D. Georgieva.
    Physica Status Solidi C 9 (2012) 1070-1073.

    InN Grown by Migration Enhanced Afterglow
    K. S. A. Butcher, D. Alexandrov, P. Terziyska, V. Georgiev, D. Georgieva and P. W. Binsted
    Physica Status Solidi A 209 (2012) 41-44.

    InN on GaN Heterostructure Growth by Migration Enhanced Afterglow(MEAglow)
    P.W.  Binsted, K. S. A. Butcher, D. Alexandrov, P Terziyska, D. Georgieva, R. Gergova,  V. Georgiev
    Materials Research Society Symposium Proceedings, Vol. 1396 (2012) 255-260.

  • DC voltage fields generated by RF plasmas and their influence on film growth morphology through static attraction to metal wetting layers: Beyond ion bombardment effects
    K. S. A. Butcher, P. T. Terziyska, R. Gergova, V. Georgiev, D. Georgieva, P. W. Binsted, and S. Skerget
    Journal of Applied Physics 121 (2017) 013301.

    Growth of vertically oriented InN nanorods from In-rich conditions on unintentionally patterned sapphire substrates
    P. T. Terziyska, K. S. A. Butcher, P. Rafailov and D. Alexandrov
    Applied Surface Science 353 (2015) 103-105.

    GaN–InGaN LED efficiency reduction from parasitic electron currents in p-GaN
    Togtema, V. Georgiev, D. Georgieva, R. Gergova, K.S.A. Butcher and D. Alexandrov
    Solid State Electronics 103 (2015) 44-48.

    Initial results for epitaxial growth of InN on gallium oxide and improved Migration-Enhanced Afterglow Epitaxy growth on gallium nitride
    R. Gergova, K. S. A. Butcher, P. W. Binstead and D. Gogova
    Journal of Vacuum Science and Technology B 32 (2014) 031207.

    Optical and Structural Characterisation of Nitrogen Rich  InN: Transition From Nearly Intrinsic to Strongly n-type Degenerate With  Temperature
    N. H. Tran, B. H. Le, S. Fan, S. Zhao, Z. Mi, B. A.  Schmidt, M. Savard, G. Gervais, and K. S. A. Butcher
    Applied Physics Letters 103 (2013) 262101.

    InN Nanopillars Grown From In-rich Conditions by  Migration Enhanced Afterglow
    P. Terziyska, K. S. A.  Butcher, D. Gogova, D. Alexandrov, P. Binsted and G. Wu
    Materials Letters 106 (2013) 155-157.

    Low Activation Energy for the Removal of Excess Nitrogen in Nitrogen Rich Indium Nitride
    K. S. A. Butcher, P. P.-T.Chen and J. E. Downes.
    Applied Physics Letters 100 (2012) 011913.

    Investigation of the presence of Ga droplets after pulsed InN and GaN epitaxial growth using atomic force microscopy and nanoindentation.
    P. Terziyska, K. S. A. Butcher, and D. Alexandrov.
    Applied Surface Science 258 (2012) 9997-10001.

    Initial Experiments in the Migration Enhanced Afterglow Growth of Gallium and Indium Nitride.
    K. S. A. Butcher, D. Alexandrov, P. Terziyska, V. Georgiev and D. Georgieva.
    Physica Status Solidi C 9 (2012) 1070-1073.

    Gallium Nitride Film Growth using a Plasma Based Migration Enhanced Afterglow (MEAglow) CVD System.
    K. S. A. Butcher, B. W. Kemp, I. B. Hristov, P. Terziyska, P. W. Binsted and D. Alexandrov
    Japanese Journal of Applied Physics 51 (2012) 01AF02.

    InN Grown by Migration Enhanced Afterglow
    K. S. A. Butcher, D. Alexandrov, P. Terziyska, V. Georgiev, D. Georgieva and P. W. Binsted
    Physica Status Solidi A 209 (2012) 41-44.

    InN on GaN Heterostructure Growth by Migration Enhanced Afterglow(MEAglow)
    P.W.  Binsted, K. S. A. Butcher, D. Alexandrov, P Terziyska, D. Georgieva, R. Gergova,  V. Georgiev
    Materials Research Society Symposium Proceedings, Vol. 1396 (2012) 255-260.

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