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Low-temperature self-limiting atomic layer deposition of wurtzite InN on Si(100)
Ali Haider, Seda Kizir, and Necmi Biyikli
AIP Advances 6 (2016) 045203.Comparison of trimethylgallium and triethylgallium as “Ga” source materials for the
growth of ultrathin GaN films on Si (100) substrates via hollow-cathode plasmaassisted
atomic layer deposition
Mustafa Alevli, Ali Haider, Seda Kizir, Shahid A. Leghari, and Necmi Biyikli
Journal of Vacuum Science & Technology A 34 (2016) 01A137.Substrate temperature influence on the properties of GaN thin films grown by hollowcathode
plasma-assisted atomic layer deposition
Mustafa Alevli, Neşe Gungor, Ali Haider, Seda Kizir, Shahid A. Leghari, and Necmi Biyikli
Journal of Vacuum Science & Technology A 34 (2016) 01A125.Low-temperature sequential pulsed chemical vapor deposition of ternary BxGa1-xN
and BxIn1-xN thin film alloys
Ali Haider, Seda Kizir, Cagla Ozgit-Akgun, Ali Kemal Okyay, and Necmi Biyikli
Journal of Vacuum Science & Technology A 34 (2016) 01A123.Charge Transport through Organic Molecular Wires Embedded in Ultrathin Insulating Inorganic Layer
E. Edri and H. Frei
Journal of Physical Chemistry C 119 (2015) 28326.Hollow-Cathode Plasma-Assisted Atomic Layer Deposition: a Novel Route for Low-Temperature Synthesis of Crystalline III-Nitride Thin Films and Nanostructures
N. Biyikli, C. Ozgit-Akgun, E. Goldenberg, A. Haider, S. Kizir, T. Uyar, S. Bolat, B. Tekcan, A. Kemal Okyay
2015 IEEE 35th International Conference on Electronics and Nanotechnology (ELNANO) (2015) 218.Low-temperature hollow cathode plasma-assisted atomic layer deposition of crystalline III-nitride thin films and nanostructures
C. Ozgit-Akgun, E. Goldenberg, S. Bolat, B. Tekcan, F. Kayaci, T. Uyar, A. Kemal Okyay, and N. Biyikli
Phys. Status Solidi C 12 (2015) 394.Fabrication of flexible polymer–GaN core–shell nanofibers by the combination of electrospinning and hollow cathode plasma-assisted atomic layer deposition
C. Ozgit-Akgun, F. Kayaci, S. Vempati, A. Haider, A. Celebioglu, E. Goldenberg, S. Kizir, T. Uyar and N. Biyikli
J. Mater. Chem C 3 (2015) 5199.Electronic and optical device applications of hollow cathode plasma assisted atomic layer deposition based GaN thin films
S. Bolat, B. Tekcan, C. Ozgit-Akgun, N. Biyikli and A. Kemal Okyay
Journal of Vacuum Science and Technology A 33 (2015) 01A143.Low-Temperature Deposition of Hexagonal Boron Nitride via Sequential Injection of Triethylboron and N2/H2 Plasma
A. Haider, C. Ozgit-Akgun, E. Goldenberg, A. Kemal Okyay and N. Biyikli
Journal of the American Ceramic Society 97 (2014) 4052-4059.Metal-semiconductor-metal ultraviolet photodetectors based on gallium nitride grown by atomic layer deposition at low temperatures
B. Tekcan, C. Ozgit-Akgun, S. Bolat, N. Biyikli and A. Kemal Okyay
Optical Engineering 53 (2014) 107106.Fabrication of AlN/BN bishell hollow nanofibers by electrospinning and atomic layer deposition
A. Haider, C. Ozgit-Akgun, F. Kayaci, A. Kemal Okyay, T. Uyar, and N. Biyikli
APL Materials 2 (2014) 096109.Hollow cathode plasma-assisted atomic layer deposition of crystalline AlN, GaN and AlxGa1-xN thin films at low temperatures
Cagla Ozgit-Akgun, Eda Goldenberg, Ali Kemal Okyay, and Necmi Biyikli
Journal of Materials Chemistry C 2 (2014) 2123-2126.Low temperature thin film transistors with hollow cathode plasma-assisted atomic layer deposition based GaN channels
S. Bolat, C. Ozgit-Akgun, B. Tekcan, N. Biyikli and A.K. Okyay
Applied Physics Letters, 104 (2014) 243505.Optical characteristics of nanocrystalline AlxGa1-xN thin films deposited by hollow cathode plasma-assisted atomic layer deposition
Eda Goldenberg, Cagla Ozgit-Akgun, Necmi Biyikli and Ali Kemal Okyay
Journal of Vacuum Science and Technology A 32 (2014) 031508. -
DC voltage fields generated by RF plasmas and their influence on film growth morphology through static attraction to metal wetting layers: Beyond ion bombardment effects
K. S. A. Butcher, P. T. Terziyska, R. Gergova, V. Georgiev, D. Georgieva, P. W. Binsted, and S. Skerget
Journal of Applied Physics 121 (2017) 013301.Self-Catalytic Growth of InN Nanowires
P.T. Terziyska, K.S.A. Butcher
Bulgarian Journal of Physics, 43 (2016) 54.Optoelectronic and structural properties of InGaN grown by Migration-Enhanced, Plasma-Assisted MOCVD
D. Seidlitz, M.K.I. Senevirathna, Y. Abate, A. Hoffmann and N. Dietz
Proceedings of the SPIE Vol.9571 (2015) 95710P.Growth of vertically oriented InN nanorods from In-rich conditions on unintentionally patterned sapphire substrates
P. T. Terziyska, K. S. A. Butcher, P. Rafailov and D. Alexandrov
Applied Surface Science 353 (2015) 103-105.GaN–InGaN LED efficiency reduction from parasitic electron currents in p-GaN
Togtema, V. Georgiev, D. Georgieva, R. Gergova, K.S.A. Butcher and D. Alexandrov
Solid State Electronics 103 (2015) 44-48.Initial results for epitaxial growth of InN on gallium oxide and improved Migration-Enhanced Afterglow Epitaxy growth on gallium nitride
R. Gergova, K. S. A. Butcher, P. W. Binstead and D. Gogova
Journal of Vacuum Science and Technology B 32 (2014) 031207.Optical and Structural Characterisation of Nitrogen Rich InN: Transition From Nearly Intrinsic to Strongly n-type Degenerate With Temperature
N. H. Tran, B. H. Le, S. Fan, S. Zhao, Z. Mi, B. A. Schmidt, M. Savard, G. Gervais, and K. S. A. Butcher
Applied Physics Letters 103 (2013) 262101.InN Nanopillars Grown From In-rich Conditions by Migration Enhanced Afterglow
P. Terziyska, K. S. A. Butcher, D. Gogova, D. Alexandrov, P. Binsted and G. Wu
Materials Letters 106 (2013) 155-157.Gallium Nitride Film Growth using a Plasma Based Migration Enhanced Afterglow (MEAglow) CVD System.
K. S. A. Butcher, B. W. Kemp, I. B. Hristov, P. Terziyska, P. W. Binsted and D. Alexandrov
Japanese Journal of Applied Physics 51 (2012) 01AF02.Investigation of the presence of Ga droplets after pulsed InN and GaN epitaxial growth using atomic force microscopy and nanoindentation.
P. Terziyska, K. S. A. Butcher, and D. Alexandrov.
Applied Surface Science 258 (2012) 9997-10001.Initial Experiments in the Migration Enhanced Afterglow Growth of Gallium and Indium Nitride.
K. S. A. Butcher, D. Alexandrov, P. Terziyska, V. Georgiev and D. Georgieva.
Physica Status Solidi C 9 (2012) 1070-1073.InN Grown by Migration Enhanced Afterglow
K. S. A. Butcher, D. Alexandrov, P. Terziyska, V. Georgiev, D. Georgieva and P. W. Binsted
Physica Status Solidi A 209 (2012) 41-44.InN on GaN Heterostructure Growth by Migration Enhanced Afterglow(MEAglow)
P.W. Binsted, K. S. A. Butcher, D. Alexandrov, P Terziyska, D. Georgieva, R. Gergova, V. Georgiev
Materials Research Society Symposium Proceedings, Vol. 1396 (2012) 255-260. -
DC voltage fields generated by RF plasmas and their influence on film growth morphology through static attraction to metal wetting layers: Beyond ion bombardment effects
K. S. A. Butcher, P. T. Terziyska, R. Gergova, V. Georgiev, D. Georgieva, P. W. Binsted, and S. Skerget
Journal of Applied Physics 121 (2017) 013301.Growth of vertically oriented InN nanorods from In-rich conditions on unintentionally patterned sapphire substrates
P. T. Terziyska, K. S. A. Butcher, P. Rafailov and D. Alexandrov
Applied Surface Science 353 (2015) 103-105.GaN–InGaN LED efficiency reduction from parasitic electron currents in p-GaN
Togtema, V. Georgiev, D. Georgieva, R. Gergova, K.S.A. Butcher and D. Alexandrov
Solid State Electronics 103 (2015) 44-48.Initial results for epitaxial growth of InN on gallium oxide and improved Migration-Enhanced Afterglow Epitaxy growth on gallium nitride
R. Gergova, K. S. A. Butcher, P. W. Binstead and D. Gogova
Journal of Vacuum Science and Technology B 32 (2014) 031207.Optical and Structural Characterisation of Nitrogen Rich InN: Transition From Nearly Intrinsic to Strongly n-type Degenerate With Temperature
N. H. Tran, B. H. Le, S. Fan, S. Zhao, Z. Mi, B. A. Schmidt, M. Savard, G. Gervais, and K. S. A. Butcher
Applied Physics Letters 103 (2013) 262101.InN Nanopillars Grown From In-rich Conditions by Migration Enhanced Afterglow
P. Terziyska, K. S. A. Butcher, D. Gogova, D. Alexandrov, P. Binsted and G. Wu
Materials Letters 106 (2013) 155-157.Low Activation Energy for the Removal of Excess Nitrogen in Nitrogen Rich Indium Nitride
K. S. A. Butcher, P. P.-T.Chen and J. E. Downes.
Applied Physics Letters 100 (2012) 011913.Investigation of the presence of Ga droplets after pulsed InN and GaN epitaxial growth using atomic force microscopy and nanoindentation.
P. Terziyska, K. S. A. Butcher, and D. Alexandrov.
Applied Surface Science 258 (2012) 9997-10001.Initial Experiments in the Migration Enhanced Afterglow Growth of Gallium and Indium Nitride.
K. S. A. Butcher, D. Alexandrov, P. Terziyska, V. Georgiev and D. Georgieva.
Physica Status Solidi C 9 (2012) 1070-1073.Gallium Nitride Film Growth using a Plasma Based Migration Enhanced Afterglow (MEAglow) CVD System.
K. S. A. Butcher, B. W. Kemp, I. B. Hristov, P. Terziyska, P. W. Binsted and D. Alexandrov
Japanese Journal of Applied Physics 51 (2012) 01AF02.InN Grown by Migration Enhanced Afterglow
K. S. A. Butcher, D. Alexandrov, P. Terziyska, V. Georgiev, D. Georgieva and P. W. Binsted
Physica Status Solidi A 209 (2012) 41-44.InN on GaN Heterostructure Growth by Migration Enhanced Afterglow(MEAglow)
P.W. Binsted, K. S. A. Butcher, D. Alexandrov, P Terziyska, D. Georgieva, R. Gergova, V. Georgiev
Materials Research Society Symposium Proceedings, Vol. 1396 (2012) 255-260.
