Today Meaglow was the feature story in or Magazine in an article entitled Slashing Temperatures for Nitride Growth. The article discusses Meaglow Ltd. technology in comparison to MOCVD, the Meaglow growth technique and applications to industry as well as a background on one of the founder, Dr. Scott Butcher. left: Migration enhanced overflow can form Ga-face GaN films with a thickness of 200 nm at 630 ºC. Atomic force microscopy reveal that the root-mean-square surface roughness of this film is 0.23 nm. Molecular terraces can be distinguished in the image. Above right: Atomic force microscopy reveals that the InN surface has a root-mean-square roughness of 0.1 nm and features molecular terraces. Click on article for more details.