THUNDER BAY, ONTARIO.—August 30, 2012—Meaglow Ltd. (Privately Held) announces its low temperature Migration Enhanced Afterglow film growth technique has been used to produce a thick Indium Gallium Nitride (InGaN) layer with strong yellow emission. This recent result bodes well to increase the efficiency and lower production costs of green LEDs and laser diodes. The company is currently seeking collaboration opportunities to enhance the material properties required by industry for lighting, display, medical, and military applications among other uses.
Meaglow is proud to announce one of our researchers, Dr. Penka Terziyska, has been awarded a prize at ICNS-9 in Glasgow, U.K. The poster analyzes the Atomic Force Microscopic Study of GaN growth by Migration Enhanced Afterglow (MEAglow).
See the winning poster: ICNS9 Poster