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UT Dallas report more high-quality Silicon Nitride grown with one of their hollow cathode plasma source

Professor Jiyoung Kim’s group at the University of Texas, Dallas, have recently published (see this link) some interesting work using tris(disilanyl)amine as a precursor and one of our UHV series hollow cathode plasma sources (pictured left) for the ALD growth of silicon nitride. They were able to get wet etch rates for 1:100 dilute HF of as low as 0.47 nm/min which they attributed to the material being slightly silicon rich. The growth per cycle was also quite high.

Professor Kim’s group actually have two hollow cathode sources. I wonder what they use the other one for? I must ask them him day, though it might be an industry related secret.

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