Unlock the Full Potential of Your ALD or CVD System with Meaglow.

Capable of Being Used with Ammonia, Argon, Hydrogen, Nitrous Oxide, Oxygen, and Nitrogen

80% GaN With ICP Plasma Source

99.8% GaN With Meaglow Plasma Source

ALD With ICP Plasma Source

Crystallinity ICP

ALD With Meaglow HC Plasma Source

Crystallinity With

Al2O3 Growth Cycle % Improvement with Meaglow over ICP

InN Growth Cycle % Improvement

AlN Grown with NH3 Growth Cycle % Improvement

AlN Grown with N2H2 Growth Cycle % Improvement

The Meaglow Plasma Source is an amazing piece of technology that has huge potential to change material science forever.
Richard StevensonEditor, Compound Semiconductor

Meaglow’s Next Generation Plasma Source allowed our team to grow better GaN films with faster growth rates at lower temperatures.
Necmi BiyilkiBilkent University

Fully Customizable

Meaglow’s Hollow Cathode Plasma Sources are fully customizable. Contact us to see if our Plasma Source is compatible with your research needs and system.

Increased Efficiency

Less energy and consumable materials utilized to decrease operating costs in research and development to provide a higher return on research.

Amazingly Fast Startup Times

Save time by being able to grow product layers within 6 hours of a full maintenance shut down. Maintenance intervals can be months apart.